• Latest 7th Gen. CSTBT™ IGBT and RFC-Diode technologies
  • Half bridge Configuration
  • Compatible 34mm housing
  • Low power loss at high switching frequency operation (fc: 20~60kHz)
  • Optimized for trade-off of IGBT and Diode
  • Low thermal resistance and high power density by AlN ceramic substrate
  • Low inductive package with 4kV insulation
  • High temperature operation with Tvjmax = 175˚C junction temperature at overload events



650 V : 100 A, 150 A, 200 A
1200 V: 100 A, 150 A
1700 V: 75 A, 100 A

Dimensions [mm]:

34 x 94 x 30



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7th Generation IGBT Modules STD-Type