LV100 optimized for new energy applications

  • New standard  for high power
  • 2000 V 2-level topology enable up to 24% higher output power
  • Scalability by easy paralleling
  • High efficiency by latest 7th Gen. IGBT Technology
  • Superior thermal cycle capability by SLC-Technology
  • Pre applied phase change thermal interface material available
  • Suitable for usage in 3-level topology with low commutation inductances

Contact us

Mitsubishi Electric Europe B.V.
Semiconductor European Business Group
Mitsubishi-Electric-Platz 1
D – 40882 Ratingen

Phone: +49 (0) 2102 / 486 – 0
Fax: +49 (0) 2102 / 486 – 4140

E-Mail: semis.info@meg.mee.com
Internet: www.meu-semiconductor.eu

I am looking for ...

    IGBT for Renewables

    • 2-in-1

      LV100 for Industrial

      Ratings

      1700 V: 800 A, 1200 A
      1200 V: 800 A,1200 A
      2000 V: 1200 A

      Dimensions [mm]

      100 x 144 x 40

    • 2-in-1

      7th Gen. IGBT NX-M pkg.

      Ratings

      650 V: 300 A, 450 A, 600 A
      1200 V: 225 A, 300 A, 450 A, 600 A, 800 A
      1700 V: 225 A, 300 A, 450 A, 600 A

      Dimensions [mm]

      62 x 152 x 17

    • 2-in-1

      7th Gen. IGBT NX-L pkg.

      Ratings

      1200 V : 1000 A

      Dimensions [mm]

      110 x 137 x 17

    • 2-in-1

      X-Series LV100 2-in-1

      Ratings

      1700 V: 1200 A
      3300 V: 450 A, 600 A

      Dimensions [mm]

      100 x 144 x 40

    • 3-level

      3-level high power

      Ratings

      1200 V: 1400 A
      1700 V: 600 A, 800 A, 1000 A

      Dimensions [mm]

      67 x 130 x 29.5

    • 3-level

      3-level T-Type

      Ratings

      1200 V/650 V : 400 A

      Dimensions [mm]

      82 x 115 x 28

    • 2-in-1

      7th Gen. 80mm

      Ratings

      2000 V : 400 A

      Dimensions [mm]

      80 x 110 x 29

    Full SiC for Renewables

    • 2-in-1 / 4-in-1

      Full SiC NX

      Ratings

      1200 V : 400 A, 800 A

      Dimensions [mm]

      92 x 122 x 17

    • 2-in-1

      Full SiC NX-L pkg with RTC

      Ratings

      1200 V : 1200 A

      Dimensions [mm]

      122 x 152 x 23.3

    • 2-in-1

      Full SiC NX pkg. with RTC

      Ratings

      1200 V : 600 A, 800 A
      1700 V : 300 A

      Dimensions [mm]

      79.6 x 122 x 30.1

    • TO247-4

      SiC MOSFET Discrete

      Ratings

      1200 V : 22, 40, 80 mOhm

      Dimensions [mm]

      15.9 x 21 x 5

    • 2-in-1

      Full SiC LV100

      Ratings

      Full-SiC:
      3300 V: 175 A, 375 A, 750 A

      Dimensions [mm]

      100 x 144 x 40

    • 1-in-1

      SiC Diode Discrete

      Ratings

      600 V : 20 A

      Dimensions [mm]

      10 x 15 x 4.4

    • 2-in-1

      Full SiC 62mm

      Ratings

      1200 V: 400 A

      Dimensions [mm]

      62 x 108 x 30

Any Questions?

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Mitsubishi Electric Europe B.V.
Semiconductor European Business Group
Mitsubishi-Electric-Platz 1
D - 40882 Ratingen

Phone: +49 (0) 2102 / 486 – 0
Fax: +49 (0) 2102 / 486 – 4140

E-Mail: semis.info@meg.mee.com
Internet: www.meu-semiconductor.eu