• Power loss reduced approx. 70% compared to the conventional Si IGBT product
  • Low-inductance package adopted to deliver full SiC performance
  • Contributes to increasing the output current and downsizing peripheral components by low power loss characteristics of SiC
  • By using short circuit monitoring circuit in the module it is possible to transfer a short circuit detection signal to the system side



1200 V : 600 A, 800 A
1700 V : 300 A

Dimensions [mm]:

79.6 x 122 x 30.1