Full SiC MOSFET NX 2-in-1 Module with RTC

Advantages

• Power loss reduced approx. 70% compared to the conventional Si IGBT product
• Low-inductance package adopted to deliver full SiC performance
• Contributes to increasing the output current and downsizing peripheral components by low power loss characteristics of SiC
• By using short circuit monitoring circuit in the module it is possible to transfer a short circuit detection signal to the system side

Attributes

1200 V : 600 A, 800 A
1700 V : 300 A

79.6 x 122 x 30.1