Key Product Features

  • Low power loss CSTBTTM chip technology
  • High reliability wire bond less, Direct Lead Bonding (DLB) package
  • Extra-compact direct cooling 6-in-1 package with cooling fin
  • Solder-free insulation through high thermal conductivity substrate
  • Integrated on-chip temperature sensor
  • Integrated on-chip current sensor
  • Pb-free, RoHS compliant structure

Contact us

Mitsubishi Electric Europe B.V.
Semiconductor European Business Group
Mitsubishi-Electric-Platz 1
D – 40882 Ratingen

Phone: +49 (0) 2102 / 486 – 0
Fax: +49 (0) 2102 / 486 – 4140

E-Mail: semis.info@meg.mee.com
Internet: www.meu-semiconductor.eu

I am looking for ...

    IGBT for Automotive

    • 6-in-1

      J1-Series

      Ratings

      650 V : 600 A , 700A

      Dimensions [mm]

      115 x 120 x 18.9

    • 2-in-1

      J-Series (T-PM)

      Ratings

      650 V : 300 A

      Dimensions [mm]

      42.6 x 49.6 x 6.5

    Full SiC for Automotive

    • TO247-4

      SiC MOSFET Discrete

      Ratings

      1200 V : 22, 40, 80 mOhm

      Dimensions [mm]

      15.9 x 21 x 5

    • 1-in-1

      SiC Diode Discrete

      Ratings

      600 V : 20 A

      Dimensions [mm]

      10 x 15 x 4.4

    Driver IC for Automotive

    • 1-in-1

      J1A-Series Driver IC

      Ratings

      M81603JFP and M81605JFP

      Dimensions [mm]

      9 x 9 x 1.7

Any Questions?

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Mitsubishi Electric Europe B.V.
Semiconductor European Business Group
Mitsubishi-Electric-Platz 1
D - 40882 Ratingen

Phone: +49 (0) 2102 / 486 – 0
Fax: +49 (0) 2102 / 486 – 4140

E-Mail: semis.info@meg.mee.com
Internet: www.meu-semiconductor.eu