15.04.2025 // Power Semiconductors
TOKYO, April 15, 2025 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of two new SLIMDIP series power semiconductor modules for room air conditioners and other home appliances, the Full SiC (silicon carbide) SLIMDIP (PSF15SG1G6) and the Hybrid SiC SLIMDIP (PSH15SG1G6), on April 22. Both modules, the first SiC versions in the company’s SLIMDIP series of compact, terminal-optimized modules, achieve excellent output and power loss reduction for energy savings in small- to large-capacity appliances. They will be exhibited at Power Conversion Intelligent Motion (PCIM) Expo & Conference 2025 in Nuremberg, Germany from May 6 to 8, as well as trade shows in Japan, China and other countries.
Press release Mitsubishi Electric to Ship Full-SiC and Hybrid-SiC SLIMDIP Samples (PDF)
08.04.2025 // Power Semiconductors
TOKYO, April 8, 2025 April 11, 2025 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of its new XB Series high-voltage insulated-gate bipolar transistor (HVIGBT) module, a 3.3k-volt, 1500A high-capacity power semiconductor for large industrial equipment such as railway vehicles, on May 1. By adopting proprietary diode and insulated gate bipolar transistor (IGBT) elements, as well as a unique chip termination structure, the module’s improved moisture resistance will help to improve the efficiency and reliability of inverters for large industrial equipment operating in diverse environments. Mitsubishi Electric will exhibit the XB Series HVIGBT module at Power Conversion Intelligent Motion (PCIM) Expo & Conference 2025 in Nuremberg, Germany from May 6 to 8.
18.03.2025 // High Frequency Devices
TOKYO, March 18, 2025 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new 16W-average-power gallium nitride (GaN) power amplifier module (PAM) for 5G massive MIMO (mMIMO) base stations on March 25. This PAM product, which operates in the 3.6-4.0GHz band, can be widely deployed in North America and East and Southeast Asia. As 5G networks expand from urban centers to regional areas, mMIMO base stations, especially 32T32R mMIMO base stations, are expected to be increasingly deployed. Mitsubishi Electric’s 16W GaN PAM is particularly well suited for 32T32R mMIMO base stations because it reduces both production costs and power consumption.
Press release Mitsubishi Electric to Ship Samples of 3.6-4.0GHz, 16W GaN Power Amplifier Module for 5G Massive MIMO Base Stations (PDF)
14.01.2025 // Power Semiconductors
TOKYO, January 14, 2025 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as an industrial-use power semiconductor module for solar and other renewable-energy power-supply systems. Equipped with an eighth-generation insulated gate bipolar transistor (IGBT), the module minimizes power loss and maximizes output power of inverters and other components in power systems, such as photovoltaic power-generation systems and storage batteries.
Press release Mitsubishi Electric to Ship Samples of LV100 1.2-kV IGBT Module for Industrial Use (PDF)
23.12.2024 // Power Semiconductors
TOKYO, December 23, 2024 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of two new S1-Series High Voltage Insulated Gate Bipolar Transistor (HVIGBT) modules, both rated at 1.7kV, for large industrial equipment such as railcars and DC power transmitters from December 26. Thanks to proprietary Insulated Gate Bipolar Transistor (IGBT) devices and insulation structures, the new modules offer excellent reliability and low power loss and thermal resistance, which are expected to increase the reliability and efficiency of inverters in large industrial equipment.
Press release Mitsubishi Electric to Ship Samples of S1-Series HVIGBT Module (PDF)
20.11.2024 // Power Semiconductors
TOKYO, November 20, 2024 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will invest approximately 10 billion yen to construct a new facility for the assembly and inspection of power semiconductor modules at its Power Device Works in Fukuoka Prefecture, Japan. The plant, which was originally announced on March 14, 2023, is scheduled to begin operations in October 2026.
Press release Mitsubishi Electric’s Power Device Works to Construct New Plant (PDF)
12.11.2024 // Power Semiconductors
TOKYO, November 12, 2024 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) bare die for use in drive-motor inverters of electric vehicles (EVs), plug-in hybrid vehicles (PHEVs) and other electric vehicles (xEVs) on November 14. Mitsubishi Electric’s first standard-specification SiC-MOSFET power semiconductor chip will enable the company to respond to the diversification of inverters for xEVs and contribute to the growing popularity of these vehicles. The new SiC-MOSFET bare die for xEVs combines a proprietary chip structure and manufacturing technologies to contribute to decarbonization by enhancing inverter performance, extending driving range and improving energy efficiency in xEVs.
Press release Mitsubishi Electric to Ship Samples of SiC-MOSFET Bare Die for xEVs (PDF)
30.09.2024 // Power Semiconductors
TOKYO, September 30, 2024 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that its Power Device Works’ Fukuyama Factory has begun large-scale supply of power semiconductor chips made from 12-inch silicon (Si) wafers for the assembly of semiconductor modules, effective immediately. The advanced Si power-semiconductor modules will initially be used in consumer products. Going forward, Mitsubishi Electric expects to contribute to green transformation (GX) by providing a stable and timely supply of semiconductor chips to meet the growing demand for energy-saving power-electronics devices in various applications.
Press-release-Mitsubishi-Electric-Begins-Supplying-Power-Semiconductor-Chips-Made-from-12-inch-Wafers-for-Semiconductor-Module-Assembly (PDF)
10.06.2024 // Power Semiconductors
TOKYO, June 10, 2024 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has begun shipping low-current 3.3kV/400A and 3.3kV/200A versions of a Schottky barrier diode (SBD) embedded silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) module for large industrial equipment, including rolling stock and electric power systems, from today, June 10. Together with the existing 3.3kV/800A version, the newly named UnifullTM series comprises three modules to meet the growing demand for inverters capable of increasing power output and power conversion efficiency in large industrial equipment. The new modules will be exhibited at major trade shows, including Power Conversion Intelligent Motion (PCIM) Europe 2024 in Nuremberg, Germany from June 11 to 13.
Press-release-Mitsubishi-Electric-Ships-Two-New-SBD-embedded-SiC-MOSFET-Modules (PDF)
23.01.2024 // Power Semiconductors
TOKYO, January 23, 2024 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today the coming release of six new J3-Series power semiconductor modules for various electric vehicles (xEVs), featuring either a silicon carbide metal-oxide semiconductor field-effect transistor (SiC-MOSFET) or a RC-IGBT (Si),1 with compact designs and scalability for use in the inverters of electric vehicles (EVs) and plug-in hybrid electric vehicles (PHEVs). All six J3-Series products will be available for sample shipments from March 25.
The new power modules will be exhibited at the 38th Electronics R&D, Manufacturing and Packaging Technology Expo (NEPCON JAPAN 2024) from January 24 to 26 at Tokyo Big Sight, Japan, as well as other exhibitions in North America, Europe, China and additional locations.
07.12.2023 // Power Semiconductors
TOKYO, December 7, 2023 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has set the terms and conditions for issuing its first corporate green bonds in the Japanese market, as initially announced in a news release on November 10.1 The proceeds from the bonds will be used to construct a silicon-carbide (SiC) power semiconductor plant and upgrade related facilities.
Mitsubishi Electric Sets Terms & Conditions for Issuing First Green Bonds (PDF)
13.11.2023 // Power Semiconductors
TOKYO, November 13, 2023 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will enter into a strategic partnership with Nexperia B.V. to jointly develop silicon carbide (SiC) power semiconductors for the power electronics market. Mitsubishi Electric will leverage its wide-bandgap semiconductor technologies to develop and supply SiC MOSFET chips that Nexperia will use to develop SiC discrete devices.
Mitsubishi Electric and Nexperia to Partner in Joint SiC Power Semiconductors Development (PDF) Mitsubishi Electric und Nexperia schließen Partnerschaft für gemeinsame Entwicklung von SiC-Leistungshalbleitern (PDF)
10.11.2023 // Power Semiconductors
TOKYO, November 10, 2023 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will issue green bonds for the first time to raise funds for the construction of a silicon carbide (SiC) power semiconductor plant and the enhancement of related production facilities1 that handle products capable of contributing to decarbonization.
Mitsubishi Electric to Issue Green Bonds for First Time Aiming to (PDF)
24.10.2023 // Power Semiconductors
TOKYO, October 24, 2023 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it played the key role in leading the project to draft the 2023 International Electrotechnical Commission (IEC) White Paper entitled “Power Semiconductors for an Energy-Wise society,” which the IEC released on October 17. This is the first time for a White Paper, published annually since 2010, to issue recommendations for developing and expanding international standards and certification systems for power semiconductors.
Each year, the IEC White Paper focuses on electrical, electronic and electromechanical technologies requiring international standardization, and makes related recommendations to the IEC and other organizations.
10.10.2023 // Power Semiconductors
TOKYO, October 10, 2023 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has agreed with Coherent Corp. (NYSE: COHR) to invest USD 500 million (approx. 75 billion yen1) in a new silicon carbide (SiC) business to be carved out from Coherent, aiming to expand its SiC power device business by strengthening vertical collaboration with Coherent, who has been a supplier of SiC substrates to Mitsubishi Electric.
Mitsubishi Electric to Invest in Coherent’s New SiC Business (PDF)
29.08.2023 // Power Semiconductors
Mitsubishi Electric Corporation (TOKYO: 6503) announced today that the company has completed installation of its first 12-inch silicon wafer processing line at its Power Device Work’s Fukuyama Factory, which manufactures power semiconductors. In addition, through sample production and testing, it has been verified that the power semiconductor chips processed on this production line achieve the required performance levels.
Mitsubishi Electric Completes Installation of 12-inch Wafer Processing Line (PDF)
13.06.2023 // Power Semiconductors
TOKYO, June 13, 2023 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of its new NX-type full-SiC (silicon carbide) power semiconductor module for industrial equipment on June 14. The module, which reduces internal inductance and incorporates a second-generation SiC chip, is expected to contribute to the realization of more efficient, smaller and lighter-weight industrial equipment.
Power semiconductors are increasingly being utilized to convert electric power extra efficiently and thereby help to lower the carbon footprint of global society. Expectations are particularly high for SiC power semiconductors because of their capability to significantly reduce power loss. The demand is expanding for high-power, high-efficiency power semiconductors capable of improving the power-conversion efficiency of components such as inverters used in industrial equipment.
08.06.2023 // High Frequency Devices
TOKYO, June 8, 2023 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today it has developed what is believed to be the world’s first* gallium nitride (GaN) power amplifier that achieves a frequency range of 3,400MHz using a single power amplifier, which the company has demonstrated can be used for 4G, 5G and Beyond 5G/6G communication systems operating at different frequencies in a single base station. The amplifier is expected to enable the radio unit (transceiver) to be shared for different communication systems and lead to more power-efficient base stations. Technical details will be presented at the IEEE International Microwave Symposium 2023 this month.
Mitsubishi Electric Achieves World’s First Wideband Operation of 4G, 5G and Beyond 5G/6G Systems with Single GaN Power Amplifier (PDF)
01.06.2023 // Power Semiconductors
TOKYO, June 1, 2023 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) embedded with a Schottky barrier diode (SBD), 1 which the company has applied in a 3.3 kV full SiC power module, the FMF 800 DC -66 BEW2 for large industrial equipment such as railways and DC power systems. Samples began shipping on May 31. The chip’s new structure is expected to help downsize railway traction systems, etc. as well as make them more energy efficient, and contribute to carbon neutrality through the increased adoption of DC power transmission.
Mitsubishi Electric Develops SBD-embedded SiC-MOSFET with New Structure for Power Modules (PDF)
26.05.2023 // Power Semiconductors
TOKYO and PITTSBURGH, May 26, 2023 – Mitsubishi Electric Corporation (TOKYO: 6503) and Coherent Corp. (NYSE: COHR), a global leader in materials, networking, and lasers, today announced that they have signed a memorandum of understanding (MOU) to collaborate on a program to scale manufacturing of SiC power electronics on a 200 mm technology platform.
Mitsubishi Electric and Coherent Enter into A Collaboration to Scale Manufacturing of SiC Power Electronics on A 200 mm Technology Platform (PDF)
08.05.2023 // Power Semiconductors
TOKYO, May 8, 2023 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) module, featuring dual-type 3.3kV withstand voltage and 6.0kVrms dielectric strength, on May 31. The new module is expected to support superior power, efficiency and reliability in inverter systems for large industrial equipment such as railways and electric power systems. It will be exhibited at major trade shows, including Power Conversion Intelligent Motion (PCIM) Europe 2023 in Nuremberg, Germany from May 9 to 11.
Mitsubishi Electric to Ship Samples of SBD-embedded SiC-MOSFET Module (PDF)
25.04.2023 // Power Semiconductors
TOKYO, April 25, 2023 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new HV100 dual-type X-Series high-voltage insulated gate bipolar transistor (HVIGBT) module on May31, offering superior power, efficiency and reliability in inverter systems for large industrial equipment such as railways and electric power systems.
Mitsubishi Electric to Ship Samples of HV100 Dual-type X-Series HVIGBT Module (PDF)
14.03.2023 // Power Semiconductors
TOKYO, March 14, 2023 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will double a previously announced its investment plan to approximately 260 billion yen in the five-year period to March 2026 mainly for constructing a new wafer plant to increase production of silicon carbide (SiC) power semiconductors.
Mitsubishi Electric to Construct New Wafer Plant to Boost SiC Power Semiconductor Business (PDF)
06.12.2022 //
TOKYO, December 6, 2022 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new thermal sensor capable of measurements up to 200°C on February 1, 2023. The company’s existing MelDIR, launched in 2019, measures temperatures from -5°C to 60°C for applications including heating, ventilation and air conditioning (HVAC), security, people counting, and smart buildings. In response to demands for measuring higher temperatures in kitchens and factories, however, the new MelDIR “MIR8060B3” uses advanced signal processing and an optimized lens to measure temperatures up to 200°C. It also is expected to help shorten the lead time between product planning and production by user support tools such as thermal- imaging examples, demonstration kits and reference designs.1
*Information for software and hardware design
Mitsubishi Electric to Ship Samples of 80×60-pixel Thermal-diode Infrared Sensor (PDF)
17.10.2022 // Power Semiconductors
Ratingen, October 17th, 2022 – Mitsubishi Electric’s Semiconductor European Business Group has been awarded by Siemens Mobility with the supplier award in the prestigious category “Moving Beyond”. The decisive factor for winning this award was the development of a 3300 V Silicon Carbide Power Module to enable sustainable railway vehicle solutions for Siemens Mobility.
Siemens Mobility Supplier Award EN (PDF) Siemens Mobility Supplier Award DE (PDF)
10.05.2022 // Power Semiconductors
Munich/Ratingen, May 10th, 2022 – Siemens Mobility and Mitsubishi Electric Europe B.V. have signed a Memorandum of Understanding (MoU) to cooperate in the field of SiC power module technology with the aim of enabling efficient and sustainable transportation and electrical energy savings in the transportation sector.
Joint Press Release Siemens Mobility Mitsubishi Electric Europe 2022 (PDF)
21.04.2022 // Power Semiconductors
TOKYO, April 21, 2022 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of its LV100-type T-series 2.0kV insulated-gate bipolar transistor (IGBT) Module for industrial use this May. The new power-semiconductor product is expected to downsize and reduce the power consumption of power-conversion equipment for use with renewable-energy sources. Also, the product will be exhibited at major trade shows, including Power Conversion Intelligent Motion (PCIM) Europe 2022 in Nuremberg, Germany from May 10 to 12.
Mitsubishi Electric to Ship Samples of LV100-type T-series (PDF)
10.03.2021 // Power Semiconductors
Mitsubishi Electric announced today that its Mitsubishi Electric Diode InfraRed (MelDIR) sensor lineup will introduce on July 1 a new thermal sensor featuring a wide field of view (FoV) and high 80×60 pixel resolution for applications including security, heating, ventilation and air conditioning (HVAC), people counting, smart buildings and thermal scanners.
Mitsubishi Electric to launch 80×60 Pixel Thermal Diode Infrared Sensor (PDF)
09.11.2020 // Power Semiconductors
Ratingen, 09. November 2020 – Mitsubishi Electric Europe B.V. German Branch is pleased to announce its acceptance as a member of the Charging Interface Initiative e. V. (CharIN). From the perspective of a manufacturer covering the supply of Power Semiconductors for a broad range of applications, Mitsubishi Electric Europe B.V. German Branch is glad to be able to contribute to the existing broad base of experts from different industries in CharIN to support the definitions of the requirements of combined charging systems and the future developments.
Mitsubishi Electric Europe B.V. German Branch becomes a member of CharIN e.V. (PDF)
15.09.2020 // Power Semiconductors
TOKYO, September 15, 2020 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today its
coming launch of second-generation full-SiC (silicon carbide) power modules featuring a newly developed SiC chip for industrial use. The low power loss characteristics and high carrier frequency operation1 of the SiC-MOSFET (metal oxide semiconductor field-effect transistor) and SiC-SBD (schottky barrier diode) chips in the modules are expected to facilitate the development of more efficient, smaller and lighter weight power equipment in various industrial fields. Sales will start in January, 2021.
25.08.2020 // Power Semiconductors
TOKYO, August 25, 2020 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today the launch of its LV100-type T-series insulated-gate bipolar transistor (IGBT) module for industrial uses. The LV100 package, which achieves high versatility and high current density, has been used widely in railway and electric power applications and now has been adapted for industrial uses. It is expected to help reduce the size and power loss of power converters, specifically inverters used for renewable energy applications such as photovoltaic and wind-power generation, and also high-capacity motor drives. Sales will start this September.
Mitsubishi Electric to Launch LV100-type T-series IGBT Module for Industrial Use (PDF)
16.06.2020 // Power Semiconductors
TOKYO, June 16, 2020 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today the launch of its N-series 1200V SiC-MOSFET (silicon-carbide metal-oxide-semiconductor field-effect transistor) featuring low power loss and high tolerance1 to self-turn-on. The new series will help to reduce the power consumption and miniaturize power supply systems requiring high-voltage conversion, such as electric vehicle (EV) onboard chargers, photovoltaic power systems and more. Sample shipments will start this July.
Mitsubishi Electric to Launch N-series 1200V SiC-MOSFET (PDF)
11.06.2020 // Power Semiconductors
TOKYO, June 11, 2020 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will acquire buildings and land from Sharp Fukuyama Semiconductor Co., Ltd., a wholly owned subsidiary of Sharp Corporation located in Fukuyama, Hiroshima Prefecture, Japan. The acquired properties will serve as a new site where Mitsubishi Electric’s Power Device Works will process wafers for the manufacture of power semiconductors. New production facilities scheduled to start up in November of next year will enable Mitsubishi Electric to expand its power device business.
Mitsubishi Electric to Acquire Factory to Expand Power Device Business (PDF)
06.08.2019 // IR-Sensors
TOKYO, August 6, 2019 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch the Mitsubishi Electric Diode InfraRed sensor (MelDIR), a thermal sensor for applications in the fields of security, heating, ventilation and air conditioning (HVAC) and smart buildings, on November 1. MelDIR accurately distinguishes between humans and other heat sources and enables the identification of specific human behavior, such as walking, running or raising hands. It delivers high-pixel, high-thermal-resolution images using thermal diode infrared sensor technology that Mitsubishi Electric developed for the Advanced Land Observing Satellite-2 “DAICHI-2” (ALOS-2).
Mitsubishi Electric to launch 80×60 Pixel Thermal Diode Infrared Sensor (PDF)
07.05.2019 // Power Semiconductors
TOKYO, May 7, 2019 – Mitsubishi Electric Corporation (TOKYO: 6503) announces the launch of three new Large DIPIPM+TM transfer-mold intelligent power modules featuring an input stage rectifier that realizes simpler and more compact designs for use in air-conditioner and in industrial inverters. Mitsubishi Electric has developed the world’s first* high-density output 100A/1200V module in its transfer-mold package.
Mitsubishi Electric to Launch Large DIPIPM+™ Series (PDF)
27.03.2019 // Power Semiconductors
TOKYO, March 27, 2019 – Mitsubishi Electric Corporation (TOKYO: 6503) announced regarding the launch of a new 1200V silicon-carbide Schottky-barrier diode (SiC-SBD) that reduces the power loss and physical size of applications such as power supply systems for infrastructure, photovoltaic power systems and more. Sample shipments will start in June 2019 and sales will begin in January 2020.
Mitsubishi Electric to Launch 1200V SiC Schottky Barrier Diode (PDF)
13.04.2016 // Power Semiconductors
TOKYO, April 13, 2016 – Mitsubishi Electric Corporation (TOKYO: 6503) announced the start of sample shipments of its new G1 series intelligent power modules (IPM), high-function modules with a dedicated IC offering self-protection functions, featuring seventh-generation insulated-gate bipolar transistors (IGBTs) and comprising three different packages and 52 models in total, is scheduled for May 2016. Variable frequency invert- ers are being increasingly used in a wide range of motor control systems to deliver enhanced energy effciency. In the output stage of these in- verters, IPMs are commonly used for switching electric currents at high speeds. There is growing demand for IPMs offering low power loss, high output and small package sizes. The new modules deliver reduced power loss and improved reliability for general-purpose inverters, servo amplifers, elevators, and other industrial equipment.
Mitsubishi Electric to Ship Samples of G1 Series IPMs Using 7th Generation IGBTs (PDF)Mitsubishi Electric has always supported companies in implementing changes for the better.
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Mitsubishi Electric Europe B.V.
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