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Pressreleases

    • 21.04.2022 // Power Semiconductors

      Mitsubishi Electric to Ship Samples of LV100-type T-series 2.0kV IGBT Module for Industrial Use

      TOKYO, April 21, 2022 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of its LV100-type T-series 2.0kV insulated-gate bipolar transistor (IGBT) Module for industrial use this May. The new power-semiconductor product is expected to downsize and reduce the power consumption of power-conversion equipment for use with renewable-energy sources. Also, the product will be exhibited at major trade shows, including Power Conversion Intelligent Motion (PCIM) Europe 2022 in Nuremberg, Germany from May 10 to 12.

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    • 10.03.2021 // Power Semiconductors

      Mitsubishi Electric to launch 80×60 Pixel Thermal Diode Infrared Sensor

      Mitsubishi Electric  announced today that its Mitsubishi Electric Diode InfraRed (MelDIR) sensor lineup will introduce on July 1 a new thermal sensor featuring a wide field of view (FoV) and high 80×60 pixel resolution for applications including security, heating, ventilation and air conditioning (HVAC), people counting, smart buildings and thermal scanners.

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    • 09.11.2020 // Power Semiconductors

      Mitsubishi Electric Europe B.V. German Branch becomes a member of CharIN e.V.

      Ratingen, 09. November 2020 – Mitsubishi Electric Europe B.V. German Branch is pleased to announce its acceptance as a member of the Charging Interface Initiative e. V. (CharIN). From the perspective of a manufacturer covering the supply of Power Semiconductors for a broad range of applications, Mitsubishi Electric Europe B.V. German Branch is glad to be able to contribute to the existing broad base of experts from different industries in CharIN to support the definitions of the requirements of combined charging systems and the future developments.

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    • 15.09.2020 // Power Semiconductors

      Mitsubishi Electric to Launch Second-generation Full-SiC Power Modules for Industrial Use

      TOKYO, September 15, 2020 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today its
      coming launch of second-generation full-SiC (silicon carbide) power modules featuring a newly developed SiC chip for industrial use. The low power loss characteristics and high carrier frequency operation1 of the SiC-MOSFET (metal oxide semiconductor field-effect transistor) and SiC-SBD (schottky barrier diode) chips in the modules are expected to facilitate the development of more efficient, smaller and lighter weight power equipment in various industrial fields. Sales will start in January, 2021.

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    • 25.08.2020 // Power Semiconductors

      Mitsubishi Electric to Launch LV100-type T-series IGBT Module for Industrial Use

      TOKYO, August 25, 2020 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today the launch of its LV100-type T-series insulated-gate bipolar transistor (IGBT) module for industrial uses. The LV100 package, which achieves high versatility and high current density, has been used widely in railway and electric power applications and now has been adapted for industrial uses. It is expected to help reduce the size and power loss of power converters, specifically inverters used for renewable energy applications such as photovoltaic and wind-power generation, and also high-capacity motor drives. Sales will start this September.

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    • 16.06.2020 // Power Semiconductors

      Mitsubishi Electric to Launch N-series 1200V SiC-MOSFET

      TOKYO, June 16, 2020 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today the launch of its N-series 1200V SiC-MOSFET (silicon-carbide metal-oxide-semiconductor field-effect transistor) featuring low power loss and high tolerance1 to self-turn-on. The new series will help to reduce the power consumption and miniaturize power supply systems requiring high-voltage conversion, such as electric vehicle (EV) onboard chargers, photovoltaic power systems and more. Sample shipments will start this July.

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    • 11.06.2020 // Power Semiconductors

      Mitsubishi Electric to Acquire Factory to Expand Power Device Business

      TOKYO, June 11, 2020 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will acquire buildings and land from Sharp Fukuyama Semiconductor Co., Ltd., a wholly owned subsidiary of Sharp Corporation located in Fukuyama, Hiroshima Prefecture, Japan. The acquired properties will serve as a new site where Mitsubishi Electric’s Power Device Works will process wafers for the manufacture of power semiconductors. New production facilities scheduled to start up in November of next year will enable Mitsubishi Electric to expand its power device business.

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    • 06.08.2019 // IR-Sensors

      Mitsubishi Electric to Launch MelDIR Thermal Diode Infrared Sensor

      TOKYO, August 6, 2019 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch the Mitsubishi Electric Diode InfraRed sensor (MelDIR), a thermal sensor for applications in the fields of security, heating, ventilation and air conditioning (HVAC) and smart buildings, on November 1. MelDIR accurately distinguishes between humans and other heat sources and enables the identification of specific human behavior, such as walking, running or raising hands. It delivers high-pixel, high-thermal-resolution images using thermal diode infrared sensor technology that Mitsubishi Electric developed for the Advanced Land Observing Satellite-2 “DAICHI-2” (ALOS-2).

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    • 07.05.2019 // Power Semiconductors

      Mitsubishi Electric to Launch Large DIPIPM+™ Series

      TOKYO, May 7, 2019 – Mitsubishi Electric Corporation (TOKYO: 6503) announces the launch of three new Large DIPIPM+TM transfer-mold intelligent power modules featuring an input stage rectifier that realizes simpler and more compact designs for use in air-conditioner and in industrial inverters. Mitsubishi Electric has developed the world’s first* high-density output 100A/1200V module in its transfer-mold package.

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    • 27.03.2019 // Power Semiconductors

      Mitsubishi Electric to Launch 1200V SiC Schottky Barrier Diode

      TOKYO, March 27, 2019 – Mitsubishi Electric Corporation (TOKYO: 6503) announced regarding the launch of a new 1200V silicon-carbide Schottky-barrier diode (SiC-SBD) that reduces the power loss and physical size of applications such as power supply systems for infrastructure, photovoltaic power systems and more. Sample shipments will start in June 2019 and sales will begin in January 2020.

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    • 13.04.2016 // Power Semiconductors

      Mitsubishi Electric to Ship Samples of G1 Series IPMs Using 7th Generation IGBTs

      TOKYO, April 13, 2016 – Mitsubishi Electric Corporation (TOKYO: 6503) announced the start of sample shipments of its new G1 series intelligent power modules (IPM), high-function modules with a dedicated IC offering self-protection functions, featuring seventh-generation insulated-gate bipolar transistors (IGBTs) and comprising three different packages and 52 models in total, is scheduled for May 2016. Variable frequency invert- ers are being increasingly used in a wide range of motor control systems to deliver enhanced energy effciency. In the output stage of these in- verters, IPMs are commonly used for switching electric currents at high speeds. There is growing demand for IPMs offering low power loss, high output and small package sizes. The new modules deliver reduced power loss and improved reliability for general-purpose inverters, servo amplifers, elevators, and other industrial equipment.

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