// Articles
This article presents the latest developments on 3.3 kV SiC power modules. Improvements in the chip and packaging design allow lower losses and higher switching frequencies of SiC converters. At the same time, ruggedness against bipolar degradation and high-humidity operation has been confirmed.
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// Articles
In power electronics, Insulated Gate Bipolar Transistor (IGBT) technology is crucial for high-efficiency in high-power applications especially where the blocking voltages are above 600 V.
Mitsubishi Electric’s 8th generation IGBT chips in the innovative LV100 package promise superior performance and reliability, making them essential for renewable applications.
// Articles
The transition to power modules based on SiC MOSFET technology from Si IGBT technology is inevitable. However, form factor preferences which are carry-overs from the Si IGBT era still impede the commercialization of SiC technology as they have been known to have high parasitic inductance. Mitsubishi Electric has broken this deadlock by developing a modified NX package with an internal busbar structure suitable for SiC MOSFETS.
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// Articles
The requirements for reliability, compactness and energy efficiency on electric drive systems are constantly increasing. Competition is particularly tough for applications in volume markets. For such volume-market applications (e.g., air conditioners, washing machines, heat pumps or industrial drives) severe cost pressure is an additional challenge. DIPIPM™ addresses the increasingly demanding technical requirements while the framework conditions in terms of costs are taken into account. In those applications, DIPIPM is an enabler for maximum competitiveness and customer satisfaction.
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// Articles
The requirements of future power-electronic converters are increasing constantly. Power density and converter efficiency have to increase further. Output power shall be adaptable for various projects and end customers.
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// Articles
The challenge of IGBT module paralleling is to understand the necessary de-rating of power
converters under consideration of different module parameters. This understanding is important for
proper module parallel operation inside the thermal and safe operation limits.
// Articles
Using 1700 V IGBT power modules for 1500 VDC applications carries many risks for unpredicted converter failures. Instead, a newly developed 2.0 kV Class IGBT module is enabling a reliable and efficient usage of simple 2-level topology for 1500VDC renewable inverter systems.
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