Advantages

  • Power loss reduced approx. 70% compared to the conventional Si IGBT product
  • Low-inductance package adopted to deliver full SiC performance
  • Contributes to increasing the output current and downsizing peripheral components by low power loss characteristics of SiC
  • By using short circuit monitoring circuit in the module it is possible to transfer a short circuit detection signal to the system side

Attributes

Ratings:

1200 V : 1200 A

Dimensions [mm]:

122 x 152 x 23.3

Downloads

3D-Model

Presentations