• Power loss reduced approx. 70% compared to the conventional Si IGBT product
  • Low-inductance package adopted to deliver full SiC performance
  • Contributes to increasing the output current and downsizing peripheral components by low power loss characteristics of SiC



1200 V : 400 A, 800 A

Dimensions [mm]:

92 x 122 x 17



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High voltage SiC: Your guide into the de-carbonized future