Advantages

  • Power loss reduced approx. 70% compared to the conventional Si IGBT product
  • Low-inductance package adopted to deliver full SiC performance
  • Contributes to increasing the output current and downsizing peripheral components by low power loss characteristics of SiC

Attributes

Ratings:

1200 V : 400 A, 800 A

Dimensions [mm]:

92 x 122 x 17

3D-Model