• Cutting edge SiC performance up to 3,300 V
  • Superior efficiency and power density increase compared to silicon product
  • Low inductance package to deliver the entire SiC performance
  • Easy replacement from current silicon products and reduction of development time
  • High reliability and comprehensive market experience
  • 800 A power module with SBD-embedded MOSFET dedicated for high switching frequencies



SBD-embedded Full-SiC:
3300 V: 800 A

3300 V: 185 A, 375 A, 750 A

Dimensions [mm]:

100 x 144 x 40



YouTube Logo

We need your consent to load the Youtube service!

We use a third party service to embed video content that may collect data about your activity.
Please review the details and accept the service to watch this video.

This content is not permitted to load due to trackers that are not disclosed to the visitor.
The website owner needs to setup the site with their CMP to add this content to the list of technologies used.

Benefits of Mitsubishi Electric’s highly efficient SiC products – Example of a hydrogen powered train application (overview)