Advantages

  • Low Switching Losses
  • High Speed Trench IGBT
  • SiC Diode
  • High thermal performance and Power Density by AlN substrates

Attributes

Ratings:

1200 V : 200 A, 300 A

Dimensions [mm]:

62 x 108 x 29.5

Downloads

3D-Model

Presentations

  • Hybird-SiC-NFH-Line-up