Advantages

  • Low power loss with latest planer SiC-MOSFET (G2B) technology
    (RDS(on) = 1.75 mΩ @150 °C, Improved Qrr by proton irradiation)
  • Without SBD (negligible-level defect expansion caused by body diode current)
  • Stable characteristic over time by improved quality of gate oxide
  • Low cosmic ray FIT rate <100 FIT at 1500 VDC
  • 2500 V class, offering sufficient margin for switching in 1500 VDC system applications
  • High thermal cycle capability with AlSiC baseplate

Attributes

Ratings:

2500 V: 1600 A

Dimensions [mm]:

100 x 144 x 40

Downloads

3D-Model

Presentations