Advantages

  • Latest 7th Gen. CSTBT™ IGBT and RFC-Diode technologies
  • Half bridge Configuration
  • Compatible 48mm housing
  • Low power loss at high switching frequency operation (fc: 20~60kHz)
  • Optimized for trade-off of IGBT and Diode
  • Low thermal resistance and high power density by AlN ceramic substrate
  • Low inductive package with 4kV insulation
  • High temperature operation with Tvjmax = 175˚C junction temperature at overload events

Attributes

Ratings:

650 V : 300 A, 400 A
1200 V: 200 A, 300 A
1700 V: 150 A, 200 A

Dimensions [mm]:

48 x 94 x 30

3D-Model