Advantages

  • Latest 7th Gen. CSTBT™ IGBT and RFC-Diode technologies
  • Half bridge Configuration
  • Low power loss at high switching frequency operation (fc: 20~60kHz)
  • Optimized for trade-off of IGBT and Diode
  • Low thermal resistance and high power density by AlN ceramic substrate
  • Low inductive package with 4kV insulation
  • High temperature operation with Tvjmax = 175˚C junction temperature at overload events

Attributes

Ratings:

1200 V: 200 A

Dimensions [mm]:

48 x 94 x 29

Downloads

3D-Model

Presentations

Videos

YouTube Logo

We need your consent to load the Youtube service!

We use a third party service to embed video content that may collect data about your activity.
Please review the details and accept the service to watch this video.

7th gen high speed TH-Series IGBT modules: Latest IGBT technology for the high frequency applications

7th gen high speed TH-Series IGBT modules: Latest IGBT technology for the high frequency applications