Full-SiC 2-in-1 750A 3300V

Advantages

• Cutting edge SiC performance up to 3,300 V
• Superior efficiency and power density increase compared to silicon product
• Low inductance package to deliver the entire SiC performance
• Easy replacement from current silicon products and reduction of development time
• High reliability and comprehensive market experience
• 800 A power module with SBD-embedded MOSFET dedicated for high switching frequencies

Attributes

SBD-embedded Full-SiC:
3300 V: 800 A

Full-SiC:
3300 V: 185 A, 375 A, 750 A

100 x 144 x 40