Advantages

  • Cutting edge SiC performance up to 3,300 V
  • Superior efficiency and power density increase compared to silicon product
  • Low inductance package to deliver the entire SiC performance
  • Easy replacement from current silicon products and reduction of development time
  • High reliability and comprehensive market experience
  • 800 A power module with SBD-embedded MOSFET dedicated for high switching frequencies

Attributes

Ratings:

SBD-embedded Full-SiC:
3300 V: 800 A

Full-SiC
3300 V: 175 A, 375 A, 750 A

Hybrid-SiC
3300 V : 600 A

Dimensions [mm]:

100 x 144 x 40

Downloads

3D-Model

Presentations

Videos

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Benefits of Mitsubishi Electric’s highly efficient SiC products – Example of a hydrogen powered train application (overview)

Benefits of Mitsubishi Electric’s highly efficient SiC products – Example of a hydrogen powered train application (overview)High voltage SiC: Your guide into the de-carbonized futureHigh voltage SiC power modules for highest reliability railway applicationsLow inductive, future-proof high-voltage LV100 and HV100 dual modules for great flexibilityLV100 power modules - the best approach for high power applications