Full SiC MOSFET NX 2-in-1 4-in-1 Module

Advantages

• Power loss reduced approx. 70% compared to the conventional Si IGBT product
• Low-inductance package adopted to deliver full SiC performance
• Contributes to increasing the output current and downsizing peripheral components by low power loss characteristics of SiC

Attributes

1200 V : 400 A, 800 A

92 x 122 x 17