Advantages

  • Integrated newly developed SiC MOSFET for improved efficiency
  • No requirement of negative bias due to SiC MOSFET with high enough  gate threshold voltage
  • Single 15VDC drive voltage compatible with industry standard 15VDC IGBT drive voltage
  • Smaller package (30% smaller than Super Mini DIPIPM Package)
  • Integrated bootstrap diodes eliminate the need for external diodes, simplifying design & PCB layout
  • Dedicated protection functions: short circuit, over temperature, under voltage lockout
  • LVIC temperature available as analog voltage output
  • Robust package for high temperature operation, TC,max of 115oC for switching operation
  • UL recognized, isolation voltage , Viso = 2000V AC RMS

Attributes

Ratings:

600 V: 15 A

Dimensions [mm]:

18.8 x 32.8 x 3.6

Downloads

3D-Model

Presentations