J3-Series (SiC J3-HEXA-S) - Mitsubishi Electric Semiconductor Website

Advantages

Extra-compact, direct-cooled 6-in-1 package with cooling fin
High reliability Direct Lead Bonding (DLB) wire bond less package for automotive inverters
Low power loss Trench SiC MOSFET
Integrated Multi-Function-Chip for temperature-sensing and rapid SC protection
Pb-free structure, compliant with RoHS directive (2011/65/EU)

Attributes

Ratings:

1300V: 350A

Dimensions [mm]:

87 x 111 x 14

Downloads

Articles
- Next-Gen SiC MOSFET & Si RC-IGBT: Bare-Dies and Transfer Mold Power Modules
- Enhancing xEV Powertrains: J3-Series SiC Modules Redefine Efficiency and Compactness with Advanced Trench Technology
Datasheets
- No datasheets available for this product.
Flyer
- No flyers available for this product.
Application Notes
- No application notes available for this product.
Press Releases
- Mitsubishi Electric to Release J3-Series SiC and Si Power Module Samples (23.01.2024)

3D-Model

Presentations

Line-up & Features Chip Technology Internal Structure

Videos

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J3-Series: High Power-Density, High-Reliability, Scalable SiC and Si Power Modules for E-Mobility

J3-Series(SiC J3-HEXA-S)