Advantages

  • High Speed IGBT combined with SiC SB-Diode for recovery loss elimination
  • Comprehensive Line-up 600V ~ 1200V , 100A ~ 600A half bridge configuration
  • Low power loss at high switching frequency operation (fc: 20~60 kHz)
  • Optimized for trade-off of IGBT and Diode
  • Low thermal resistance and high power density by AlN ceramic substrate

Attributes

Ratings:

1200 V : 200 A, 300 A

Dimensions [mm]:

48 x 94 x 29

Downloads

3D-Model

Presentations