Advantages

  • Latest 7th Gen. CSTBT™ IGBT and RFC-Diode technologies
  • Half bridge Configuration
  • Compatible 62mm housing
  • Low power loss at high switching frequency operation (fc: 20~60kHz)
  • Optimized for trade-off of IGBT and Diode
  • Low thermal resistance and high power density by AlN ceramic substrate
  • Low inductive package with 4kV insulation
  • High temperature operation with Tvjmax = 175˚C junction temperature at overload events

Attributes

Ratings:

1200 V: 400 A

Dimensions [mm]:

62 x 108 x 30

Downloads

3D-Model

Presentations

Videos

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7th gen high speed TH-Series IGBT modules: Latest IGBT technology for the high frequency applications

7th gen high speed TH-Series IGBT modules: Latest IGBT technology for the high frequency applications