Advantages

  • Latest 7th Gen. CSTBT™ IGBT and RFC-Diode technologies
  • Half bridge Configuration
  • Compatible 62mm housing
  • Low power loss at high switching frequency operation (fc: 20~60kHz)
  • Optimized for trade-off of IGBT and Diode
  • Low thermal resistance and high power density by AlN ceramic substrate
  • Low inductive package with 4kV insulation
  • High temperature operation with Tvjmax = 175˚C junction temperature at overload events

Attributes

Ratings:

1200 V: 400 A

Dimensions [mm]:

62 x 108 x 30

3D-Model

Videos

YouTube Logo

We need your consent to load the Youtube service!

We use a third party service to embed video content that may collect data about your activity.
Please review the details and accept the service to watch this video.

This content is not permitted to load due to trackers that are not disclosed to the visitor.
The website owner needs to setup the site with their CMP to add this content to the list of technologies used.

7th gen high speed TH-Series IGBT modules: Latest IGBT technology for the high frequency applications