• Latest 7th Gen. CSTBT™ IGBT and RFC-Diode technologies
  • Half bridge Configuration
  • Low power loss at high switching frequency operation (fc: 20~60kHz)
  • Optimized for trade-off of IGBT and Diode
  • Low thermal resistance and high power density by AlN ceramic substrate
  • Low inductive package with 4kV insulation
  • High temperature operation with Tvjmax = 175˚C junction temperature at overload events



1200 V: 400 A, 600 A

Dimensions [mm]:

80 x 110 x 31



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7th gen high speed TH-Series IGBT modules: Latest IGBT technology for the high frequency applications