Advantages

  • Lower Loss and Higher Frequency Operation for System Miniaturization
  • Enhanced Long-Term Reliability via High-Quality Gate Oxide in Trench Structure by Minimizing Threshold Voltage (Vth) Drift and Performance Degradation Over Lifetime
  • Advanced Gate Protection with Mitsubishi’s Bottom P-Well Structure (BPW)
  • Mitsubishi Original Structure (SPW*1, J-FET doping*2) Realizes High Gate Reliability, Low Ron, and Low Switching Loss.

*1：Side P-Well in Trench Devices
*2：Technology to increase the impurity concentration in the JFET (Junction Field Effect Transistor) region and increase the density of the device.

Attributes

Ratings:

1200 V: 9.0mΩ
750 V: 7.8mΩ

Dimensions [mm]:

x x

Downloads

Presentations