Unifull SiC 3300V

Advantages

• Unifull SiC power module with SBD-embedded MOSFETs up to 3,300 V
• Reduced switching losses compared for high switching frequencies
• Reduced thermal resistance compared to previous 3,300 V SiC power module
• Low inductance package to deliver the entire SiC performance
• High reliability and comprehensive market experience

Attributes

3300 V: 800 A, 400A, 200A

100 x 144 x 39