Advantages

  • Unifull SiC power module with SBD-embedded MOSFETs up to 3,300 V
  • Reduced switching losses compared for high switching frequencies
  • Reduced thermal resistance compared to previous 3,300 V SiC power module
  • Low inductance package to deliver the entire SiC performance
  • High reliability and comprehensive market experience

Attributes

Ratings:

3300 V: 800 A, 400A, 200A

Dimensions [mm]:

100 x 144 x 39

Downloads

3D-Model