Advantages

  • Easy change from Si to SiC Compatible with NX-type pkg outline
  • Internal busbar for Low-inductance package, adopted to deliver full SiC performance
  • Power loss reduced approx. 70% compared to the conventional Si IGBT product
  • Contributes to increasing the output current and downsizing peripheral components by low power loss characteristics of SiC

Attributes

Ratings:

1700 V : 600A

Dimensions [mm]:

62 x 152 x 17

Downloads

3D-Model

Presentations